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| MAC212A6FP MAC212A8FP , , MAC212A10FP Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. * Blocking Voltage to 800 Volts * All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability * Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability * Gate Triggering Guaranteed in Four Modes * Indicates UL Registered -- File #E69369 * Device Marking: Logo, Device Type, e.g., MAC212A6FP, Date Code MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage(1) (TJ = -40 to +125C, Sine Wave, 50 to 60 Hz, Gate Open) MAC212A6FP MAC212A8FP MAC212A10FP On-State RMS Current (TC = +85C)(2) Full Cycle Sine Wave 50 to 60 Hz Peak Non-repetitive Surge Current (One Full Cycle, Sine Wave, 60 Hz, TC = +85C) Preceded and followed by rated current Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (TC = +85C, Pulse Width = 10 s) Average Gate Power (TC = +85C, t = 8.3 ms) Peak Gate Current (TC = +85C, Pulse Width = 10 s) RMS Isolation Voltage (TA = 25C, Relative Humidity 20%) ( ) Symbol VDRM, VRRM 400 600 800 IT(RMS) ITSM 12 100 Amps Amps Value Unit Volts http://onsemi.com ISOLATED TRIAC ( 12 AMPERES RMS 400 thru 800 VOLTS ) MT2 G MT1 1 2 3 ISOLATED TO-220 Full Pack CASE 221C STYLE 3 I2t PGM PG(AV) IGM V(ISO) TJ Tstg 40 20 0.35 2.0 1500 -40 to +125 -40 to +150 A2s Watts Watt Amps Volts C C 1 2 3 PIN ASSIGNMENT Main Terminal 1 Main Terminal 2 Gate ORDERING INFORMATION Device MAC212A6FP MAC212A8FP Package ISOLATED TO220FP ISOLATED TO220FP Shipping 500/Box 500/Box 500/Box p Operating Junction Temperature Range Storage Temperature Range MAC212A10FP ISOLATED TO220FP (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 1999 1 February, 2000 - Rev. 1 Publication Order Number: MAC212A6FP/D MAC212A6FP, MAC212A8FP, MAC212A10FP THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC RCS RJA TL Max 2.1 2.2 (typ) 60 260 Unit C/W C/W C/W C ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25C TJ = +125C IDRM, IRRM -- -- -- -- 10 2.0 A mA ON CHARACTERISTICS Peak On-State Voltage (ITM = A Peak; Pulse Width = 1 to 2 ms, Duty Cycle "17 p 2%) VTM IGT -- 1.3 1.75 Volts mA Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) Gate Non-Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 V, RL = 100 , TJ = +125C) All Four Quadrants Holding Current (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = mA) -- -- -- -- VGT -- -- -- -- VGD 0.2 IH -- 12 12 20 35 50 50 50 75 Volts 0.9 0.9 1.1 1.4 2.0 2.0 2.0 2.5 Volts -- 6.0 -- 50 mA "200 Turn-On Time (VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 s, Pulse Width = 2 s) t gt -- 1.5 -- s DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms, Gate Unenergized, TC = +85C) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +85C) dv/dt(c) -- 5.0 -- V/s dv/dt -- 100 -- V/s http://onsemi.com 2 MAC212A6FP, MAC212A8FP, MAC212A10FP Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current IH Quadrant 3 VTM MainTerminal 2 - IRRM at VRRM on state VTM IH off state + Voltage IDRM at VDRM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I IGT - (-) MT2 (-) MT2 + IGT Quadrant III (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant IV - MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 MAC212A6FP, MAC212A8FP, MAC212A10FP TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( 125 PD(AV), AVERAGE POWER DISSIPATION (WATTS) 28 24 20 = CONDUCTION ANGLE 16 12 8.0 4.0 0 0 2.0 4.0 6.0 8.0 10 12 IT(RMS), RMS ON-STATE CURRENT (AMPS) 14 dc = 180 90 60 30 115 105 85 = CONDUCTION ANGLE = 30 60 90 180 dc 95 75 0 2.0 4.0 6.0 8.0 10 12 IT(RMS), RMS ON-STATE CURRENT (AMPS) 14 Figure 1. Current Derating Figure 2. Power Dissipation 100 i T, INSTANTANEOUS ON-STATE CURRENT (AMPS) 50 20 10 5 2 1 0.5 0.2 0.1 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) VGT, GATE TRIGGER VOLTAGE (NORMALIZED) TJ = 25C TJ = 125C ITSM , PEAK SURGE CURRENT (AMP) 100 80 60 CYCLE 40 20 TC = 70C f = 60 Hz SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 1 2 3 5 NUMBER OF CYCLES 7 10 0 Figure 4. Maximum Nonrepetitive Surge Current Figure 3. Maximum On-State Characteristics 2 MAIN TERMINAL VOLTAGE = 12 Vdc ALL QUADRANTS 1.6 1.2 0.8 0.4 0 - 60 - 40 - 20 0 20 40 TC, CASE TEMPERATURE (C) 60 80 Figure 5. Typical Gate Trigger Voltage http://onsemi.com 4 MAC212A6FP, MAC212A8FP, MAC212A10FP I GT, GATE TRIGGER CURRENT (NORMALIZED) 2 I H , HOLDING CURRENT (NORMALIZED) MAIN TERMINAL VOLTAGE = 12 Vdc ALL QUADRANTS 2.8 2.4 2 1.6 1.2 0.8 0.4 0 - 60 - 40 - 20 0 20 40 TC, CASE TEMPERATURE (C) 60 80 MAIN TERMINAL VOLTAGE = 12 Vdc ALL QUADRANTS 1.6 1.2 0.8 0.4 0 - 60 - 40 - 20 0 20 40 TC, CASE TEMPERATURE (C) 60 80 Figure 6. Typical Gate Trigger Current Figure 7. Typical Holding Current r(t), TRANSIENT THERMAL RESISTANCE(NORMALIZED) 1 0.5 0.2 0.1 0.05 ZJC(t) = r(t) * RJC 0.02 0.01 0.1 0.2 0.5 1 2 5 20 50 t, TIME (ms) 100 200 500 1k 2k 5k 10 k Figure 8. Thermal Response http://onsemi.com 5 MAC212A6FP, MAC212A8FP, MAC212A10FP PACKAGE DIMENSIONS ISOLATED TO-220 Full Pack CASE 221C-02 ISSUE C -B- P -T- F N E C S SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 --- 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 --- 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28 H -Y- Q 123 A K Z L G D 3 PL J R 0.25 (0.010) M B M Y STYLE 3: PIN 1. MT 1 2. MT 2 3. GATE http://onsemi.com 6 MAC212A6FP, MAC212A8FP, MAC212A10FP Notes http://onsemi.com 7 MAC212A6FP, MAC212A8FP, MAC212A10FP ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. 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